?2001 fairchild semiconductor corporation rev. a, december 2001 fjc1386 sot-89 1 pnp epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted thermal characteristics t c =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage -30 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -6 v i c collector current (dc) -5 a p c power dissipation(t c =25 c) 0.5 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =-50 a, i e =0 -30 v bv ceo collector-emitter breakdown voltage i c =-1ma, i b =0 -20 v bv ebo emitter-base breakdown voltage i e =-50 a, i c =0 -6 v i cbo collector cut-off current v cb =-20v, v b =0 -0.5 a i ebo emitter cut-off current v eb =-5v, i c =0 -0.5 a h fe dc current gain v ce =-2v, i c =-0.5a 80 390 v ce (sat) collector-emitter saturation voltage i c =-4, i b =-0.1a -1.0 v v be (sat) base-emitter saturation voltage i c =-4, i b =-0.1a -1.5 v symbol parameter max units r ja thermal resistance, junction to ambient 250 c/w classification p q r h fe 80 ~ 180 120 ~ 270 180 ~ 390 fjc1386 low saturation transistor medium power amplifier ? complement to fjc2098 ? high collector current ? low collector-emitter saturation voltage 1. base 2. collector 3. emitter fap marking h fe grade
?2001 fairchild semiconductor corporation rev. a, december 2001 fjc1386 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. base-emitter on voltage figure 6. power derating 0 -2-4-6-8-10-12-14-16 0 -200 -400 -600 -800 -1000 -1200 -1400 i b = -7ma i b = -6ma i b = -4ma i b = -3ma i b = -2ma i b = -5ma i b = -1ma i c [ma], collector current v ce [v], collector-emitter voltage -10m -100m -1 -10 10 100 1000 v ce = - 2v ta = 25 o c ta = 125 o c ta = - 40 o c h fe , dc current gain i c [a], collector current -1m -10m -100m -1 -10 -1m -10m -100m -1 -10 ta = - 40 o c ta = 25 o c ta = 125 o c i c = 10 i b v ce (sat) [v], saturation voltage i c [a], collector current -1m -10m -100m -1 -10 -0.1 -1 -10 i c = 10 i b ta = 125 o c ta = 25 o c ta = - 40 o c v be (sat) [v], saturation voltage i c [a], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 125 o c 25 o c - 40 o c v ce = - 2v i c [a], collector current v be [v], base-emitter voltage 0 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 p c [w], collector power dissipation t a [ o c], amibient temperature
package demensions ?2001 fairchild semiconductor corporation rev. a, december 2001 fjc1386 dimensions in millimeters 0.40 0.10 2.50 0.20 (0.50) (0.40) 4.10 0.20 0.40 +0.10 ?.05 0.50 0.10 1.65 0.10 4.50 0.20 1.50 0.20 c0.2 1.50 typ 1.50 typ (1.10) sot-89
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h4 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. star*power is used under license acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx?
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